Sinmat Technologies

CMP Technology

Chemical-mechanical planarization (CMP, also called chemical-mechanical polishing) combines the chemical removal effect of an acidic/basic fluid solution with the mechanical effect of polishing with an abrasive material. An ideal CMP process should provide high-wafer throughput, low defects, high planarity and a large, robust processing window. However, the current state-of-the-art copper CMP process is complicated, requiring three steps to meet the planarity and defect metrics of the industry. Furthermore, the existing process creates high stresses during polishing, which is not compatible with the fragile, low dielectric materials now being introduced by the semiconductor industry for the 32nm node technology. To address these challenges, Sinmat has developed a novel "soft polishing layer" concept for gentle removal of copper that does not damage fragile low-K dielectric materials. Sinmat's compatible chemistries and use of their nano/nanosponge particle technology allows successful development of a flexible, defect-free process to fabricate copper-based interconnects. Sinmat's Nanosponge particles are significantly smaller and softer than slurry particles currently being used in the industry. The nanosponges create dramatically less defects in the wafers saving millions for companies like Intel and Samsung. Sinmat is currently in the process of evaluating their initial CMP products with end users. The company has been awarded several Phase I and Phase II SBIR/STTR grants from the federal government and other corporate and state organizations to support development and commercialization efforts. Sinmat is continuing to develop new CMP slurries to polish other semiconductor materials such as those used in high power applications. Several patents have been issued and several are pending.

Planarization of Wide Bandgap Semiconductors

Sinmat is currently working on developing planarization solutions for wide bandgap semiconductors. Wide bandgap materials have applications in optoelectronics such as blue/green LED's and in high-power and/or high-frequency RF applications. Additionally, they are used in portable devices such as DVDs, cell phones and other display systems. Presently, Sinmat is investigating projects on GaN (Gallium Nitride) HEMT (high electron mobility transistor), SiC (Silicon Carbide) and Diamond materials for various applications. Technology solutions range from CMP to CMS (Chemical Mechanical Smoothening) to Mechanical Planarization. Currently, Sinmat has developed a rapid, scalable, and robust CMP process for obtaining high quality atomic-level surface finish of SiC and GaN substrates. The company has also developed solutions for producing ultra-smooth Diamond films. Sinmat has many industrial collaborations with companies focussed exclusively on wide bandgap semiconductors.

GaN HEMT	Si wafer
AFM topographs of GaN and SiC surface: (A) As received surface; (B) After CMP, atomic terraces with scratch-free finish is obtained for GaN; and (C) Atomically teracced SiC (rms < 1Å, peak to valley ~ 5Å). All data obtained using in-house polishing methods.

Thin Film Battery Integrated on a Chip

Sinmat Inc. has leveraged its internal strengths in semiconductor manufacturing, planarization technology, and battery technologies, to develop innovative solutions for fabrication of integrated thin film batteries on a chip. These integrated batteries have applications in the burgeoning markets of active RFID, smart tags and sensors, and medical devices. Sinmat's batteries are based on embedded nanostructured cathodes of defective Lithium Manganospinels and display higher recyclability and excellent recharging characteristics. The direct integration of the battery on a chip using CMP technologies, makes the sytem thinner than current state-of-the-art thin film batteries which have thicker substrates.

Hybrid Rapid Thermal Processing (HRTP) Technology

Sinmat is developing software and simulations for a Hybrid Rapid Thermal Processing (HRTP) system which is expected to deliver a faster, hotter (higher temperature) and more processing robust system than the current state of the art. In this system, a low intensity lamp heats the wafer to moderate temperatures (400-700 C), while ultra-rapid annealing is achieved by application of a low-intensity, long pulse, infra-red laser beam. Such a system like a laser based system, is capable of reaching high temperatures in milliseconds/microseconds. However, unlike the standard laser systems, the unique combination of background heating and infra-red radiation provides a uniform temperature rise across the wafer and significantly reduces thermal non-uniformity. This technology is expected to be incorporated in future (below 32nm node) semiconductor manufacturing processes.